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1MBI600U-120
IGBT Module U-Series
Features
* High speed switching * Voltage drive * Low inductance module structure
1200V / 600A 1 in one-package
Equivalent Circuit Schematic
Applications
* Inverter for Motor drive * AC and DC Servo drive amplifier * Uninterruptible power supply * Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25C unless otherwise specified)
Item Collector-Emitter voltage Gate-Emitter voltage Collector current Symbol VCES VGES IC ICp -IC -IC pulse PC Tj Tstg Viso Conditions Rating 1200 20 800 600 1600 1200 600 1200 2905 +150 -40 to +125 2500 3.5 4.5 1.7 Unit V V A
Continuous 1ms
Tc=25C Tc=80C Tc=25C Tc=80C
Collector Power Dissipation Junction temperature Storage temperature AC:1min. Isolation voltage between terminal and copper base *1 Screw Torque Mounting *2 Terminals *2 Terminals *2 *1 : All terminals should be connected together when isolation test will be done. *2 : Recommendable value : Mounting 2.5 to 3.5N*m(M5 or M6), Terminal 3.5 to 4.5 N*m(M6), 1.3 to 1.7 N*m(M4)
1ms 1 device
W C VAC N*m
Electrical characteristics (at Tj=25C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbols ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) trr R lead Conditions VGE=0V, VCE=1200V VCE=0V, VGE=20V VCE=20V, IC=600mA VGE=15V, IC=600A Tj=25C Tj=125C Tj=25C Tj=125C VCE=10V, VGE=0V, f=1MHz VCC=600V IC=600A VGE=15V RG= 0.6 VGE=0V IF=600A Tj=25C Tj=125C Tj=25C Tj=125C Characteristics Min. Typ. - - - - 4.5 6.5 - 2.00 - 2.25 - 1.75 - 2.00 - 67 - 0.36 - 0.21 - 0.03 - 0.37 - 0.07 - 1.85 - 1.95 - 1.60 - 1.70 - - - 0.40 Unit Max. 4.0 800 8.5 2.35 - 2.10 - - 1.20 0.60 - 1.00 0.30 2.15 - 1.90 - 0.35 - mA nA V V
Input capacitance Turn-on time
nF s
Turn-off time Forward on voltage
V
Reverse recovery time Lead resistance, terminal-chip*3
IF=600A
s m
*3:Biggest internal terminal resistance among arm.
Thermal resistance characteristics
Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*4 Conditions IGBT FWD With thermal compound Characteristics Min. Typ. - - - - - 0.0125 Unit Max. 0.043 0.070 - C/W C/W C/W
*4 : This is the value which is defined mounting on the additional cooling fin with thermal compound.
1MBI600U-120
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip
1400 1200 Collector current : Ic [A] 1000 800 10V 600 400 200 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] VGE=20V 15V 12V Collector current : Ic [A]
IGBT Module
Collector current vs. Collector-Emitter voltage (typ.) Tj= 125C / chip
1400 1200 1000 800 600 400 200 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 8V 10V VGE=20V 15V 12V
8V
Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip
1400 1200 Collector current : Ic [A] 1000 Tj=125C 800 600 400 200 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Tj=25C
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25C / chip
10
8
6
4 Ic=1200A Ic= 600A Ic= 300A
2
0 5 10 15 20 25
Collector-Emitter voltage : VCE [V]
Gate - Emitter voltage : VGE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C
Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] 100.0 Capacitance : Cies, Coes, Cres [ nF ] Cies
Dynamic Gate charge (typ.) Vcc=600V, Ic=600A, Tj= 25C
VGE
10.0 Cres
Coes
VCE
1.0 0 10 20 30
0
0 500 1000 1500 2000 2500 3000 3500
Collector-Emitter voltage : VCE [V]
Gate charge : Qg [ nC ]
1MBI600U-120
IGBT Module
Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=0.6, Tj= 25C
10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000
Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=0.6, Tj=125C
1000 ton toff tr 100 tf
1000 toff ton tr 100
tf
10 0 200 400 600 800 1000 1200 Collector current : Ic [ A ]
10 0 200 400 600 800 1000 1200 Collector current : Ic [ A ]
Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=600A, VGE=15V, Tj= 25C
10000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 120 100 80
Switching loss vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=0.6
Eoff(125C)
ton toff 1000
Eoff(25C) 60 40 20 0 Err(125C) Eon(125C) Err(25C) Eon(25C)
100
tr tf
10 0.1 1.0 10.0 100.0
0
200
400
600
800
1000
1200
Gate resistance : Rg [ ]
Collector current : Ic [ A ]
Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=600A, VGE=15V, Tj= 125C
400 Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 0.6 ,Tj <= 125C
1500
Eon Collector current : Ic [ A ] 100.00 300
1200
900
200 Eoff 100
600
300 Err 0 0.10 1.00 10.00 0 0 400 800 1200 Gate resistance : Rg [ ] Collector - Emitter voltage : VCE [ V ]
1MBI600U-120
Forward current vs. Forward on voltage (typ.) chip
1400 1200 Forward current : IF [ A ] 1000 800 600 400 200 0 0 1 2 3 4 Forward on voltage : VF [ V ] Tj=125C Tj=25C Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] 1000
IGBT Module
Reverse recovery characteristics (typ.) Vcc=600V, VGE=15V, Rg=0.6
Irr (125C) Irr (25C) trr (125C) trr (25C)
100
10 0 200 400 600 800 1000 1200 Forward current : IF [ A ]
Transient thermal resistance (max.)
1.000 Thermal resistanse : Rth(j-c) [ C/W ]
0.100
FWD IGBT
0.010
0.001 0.001
0.010
0.100
1.000
Pulse width : Pw [ sec ]
Outline Drawings, mm M127

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